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WIRELESS COMMUNICATIONS DIVISION
TQ5131
RF IN VDD
DATA SHEET
GND
LO IN
Mode Select/ LO Input IFA Gain Select AMP's IF Out
GIC
3V Cellular Band CDMA/AMPS RFA/Mixer IC
CDMA IF IF Out Out
IF Out
Features
Small size: SOT23-8 Single 3V operation
Product Description
The TQ5131 is a 3V, RFA/Mixer IC designed specifically for Cellular band CDMA/AMPS applications. It's RF performance meets the requirements of products designed to the IS-95 and AMPS standards. The TQ5131 is designed to be used with the TQ3131 (CDMA/AMPS LNA) which provides a complete CDMA receiver for 800MHz dual-mode phones. The RFA/Mixer incorporates on-chip switches which determine CDMA, AMPS and bypass mode select. When used with the TQ3131 (CDMA/AMPS LNA), four gain steps are available. The RF input port is internally matched to 50 , greatly simplifying the design and keeping the number of external components to a minimum. The TQ5131 achieves good RF performance with low current consumption, supporting long standby times in portable applications. Coupled with the very small SOT23-8 package, the part is ideally suited for Cellular band mobile phones. Electrical Specifications1
Parameter Frequency Gain Noise Figure Input 3rd Order Intercept DC supply Current Min Typ 881 15.0 4.5 2.5 15.0 Max Units MHz dB dB dBm mA
Low-current operation Gain Select Mode Select High IP3 performance Few external components
Applications
IS-95 CDMA Mobile Phones AMPS Mobile Phones Dual Mode CDMA Cellular application
Note 1: Test Conditions: Vdd=2.8V, RF=881MHz, LO=966MHz, IF=85MHz, Ta=25C, CDMA High Gain state.
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TQ5131 Data Sheet
Electrical Characteristics
Parameter RF Frequency IF Frequency Range CDMA Mode-High Gain Gain Noise Figure Input IP3 Supply Current CDMA Mode-High Gain Low Linearity Gain Noise Figure Input IP3 Supply Current CDMA Mode-Mid Gain Gain Noise Figure Input IP3 Supply Current CDMA Mode-Low Gain Gain Noise Figure Input IP3 Supply Current AMPS Mode Gain Noise Figure Input IP3 Supply Current Supply Voltage Absolute Maximum Ratings Parameter DC Power Supply Power Dissipation Operating Temperature Storage Temperature Signal level on inputs/outputs Voltage to any non supply pin Value 5.0 500 -40 to 85 -60 to 150 +20 +0.3 Units V mW C C dBm V -5.0 9.5 12.0 5.0 -3.0 9.0 2.8 12.5 6.0 dB dB dBm mA V 5.0 7.0 10.0 10.0 10.5 dB dB dBm mA 1.0 3.5 11.0 13.5 10.5 dB dB dBm mA 14.0 17.0 4.5 -1.0 15.0 5.5 dB dB dBm mA 0 13.0 15.0 4.5 2.5 15.0 18.0 5.5 dB dB dBm mA Conditions Cellular band High side LO Min. 869 85 Typ/Nom 881 Max. 894 130 Units MHz MHz
Note 1: Test Conditions: Vdd=2.8V, RF=881MHz, LO=966MHz, IF=85MHz, TC = 25 C, Min/Max limits are at +25C case temperature, unless otherwise specified.
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TQ5131 Data Sheet
Typical Performance, Note: HG Mode=CDMA High Gain, LG Mode=CDMA Low Gain
Test Conditions, unless otherwise specified: Vdd=2.8V, Ta=25C, RF=881MHz, LO=966MHz, IF=85MHz, LO input=-4dBm Gain vs. Frequency 18 16 14 Gain (dB) Idd (mA) 12 10 8 6 4 2 869 875 882 Frequency (MHz) 888 894
HG Mode LG Mode AMPS Mode
Idd vs. Frequency 16 15 14 13 12 11 10 9 8 7 6 869 875 882 Frequency (MHz)
HG Mode LG Mode AMPS Mode
888
894
Input IP3 vs. Frequency 12 10 Input IP3 (dBm) 8 6 4 2 0 -2 -4 869 875 882 Frequency (MHz) 888 894
HG Mode
Gain vs. Temperature 18 16
Gain (dB)
LG Mode AMPS Mode
14 12 10 8 6 4 -30 0 25 Temperature (Celsius) 55 85
HG Mode LG Mode AMPS Mode
Noise Figure vs. Frequency 11 10 Noise Figure (dB) 9 Input IP3 (dBm) 8 7 6 5 4 3 2 869 875 882 Frequency (MHz) 888 894 -6 -30
HG Mode LG Mode AMPS Mode
Input IP3 vs. Temperature 12 9 6 3 0 -3 0 25 Temperature (Celsius) 55 85
HG Mode LG Mode AMPS Mode
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TQ5131 Data Sheet
Noise Figure vs. Temperature 12 Noise Figure (dB) 10 Input IP3 (dBm) 8 6 4 2 0 -30 0 25 Temperature (Celsius) 55 85
HG Mode LG Mode AMPS Mode
Input IP3 vs. LO Power 12 10 8 6 4 2 0 -2 -4 -6 -8 -6 -4 LO Power (dBm) -2 0
HG Mode LG Mode AMPS Mode
Idd vs. Temperature 18 16 14 Noise Figure (dB) Idd (mA) 12 10 8 6 4 -30 0 25 Temperature (Celsius) 55 85
HG Mode LG Mode AMPS Mode
Noise Figure vs. LO Power 11 10 9 8 7 6 5 4 3 2 -8 -6 -4 LO Power (dBm) -2 0
HG Mode LG Mode AMPS Mode
Gain vs. LO Power 18 16 14 Gain (dB) Gain (dB) 12 10 8 6 4 2 -8 -6 -4 LO Power (dBm) -2 0
HG Mode LG Mode AMPS Mode
Gain vs. Vdd 18 16 14 12 10 8 6 4 2.6 2.8 Vdd (volts) 3 3.2
HG Mode LG Mode AMPS Mode
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TQ5131 Data Sheet
Input IP3 vs. Vdd 12 10 8 Input IP3 (dBm) 6 4 2 0 -2 -4 -6 2.6 2.8 Vdd (volts) 3 3.2
HG Mode LG Mode AMPS Mode
Noise Figure vs. Vdd 11 10 Noise Figure (dB) 9 8 7 6 5 4 3 2 2.6 2.8 Vdd (volts) 3 3.2
HG Mode LG Mode AMPS Mode
Idd vs. Vdd 18 16 14 Idd (mA) 12 10 8 6 4 2.6 2.8 Vdd (volts) 3 3.2
HG Mode LG Mode AMPS Mode
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TQ5131 Data Sheet
Control 2 R1 L4 RF input C22 GND R2 GIC R3 CDMA IF Out C7 C4 IF Out L2 VDD C5 IF Out LO IN RF IN VDD VDD RF AMP Gain Select
Control 1 Mixer Mode Select R4 C12 LO INPUT
Control 3 IF AMP Gain Select C9 L3 VDD C8 AMP's IF Out C10
C6
Application/Test Circuit Bill of Material for TQ5131 RF AMP/Mixer
Component Receiver IC Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Resistor Resistor Resistor Inductor Inductor Inductor Reference Designator U1 C4 C10 C5,C8 C6,C7 C9 C12 C22 R1, R4 R2 R3 L2 L3 L4 Part Number TQ5131 .022F 18pF 1200pF 27pF 12pF 100pF 2.7pF 5.1K 8.2 82 180nH 270nH 18nH Value Size SOT23-8 0402 0402 0402 0402 0402 0402 0402 0402 0402 0402 0805 0805 0402 Manufacturer TriQuint Semiconductor
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TQ5131 Data Sheet
TQ5131 Product Description
The TQ5131 is a miniature low noise mixer (downconverter) in a small SOT-23-8 package (2.9X2.8X1.14 mm) with operation at 2.8v. It is designed for cellular CDMA applications and dualmode CDMA/AMPS mobile phones. The IC features excellent linearity with an input intercept point of +2.5dBm in its high gain mode and +10.0dBm in its low gain mode. It has a typical noise figure of 4.5 dB for CDMA and 5.0 for AMPS mode. For optimum performance the TQ5131 RF frequency of operation should be from 869 to 894 MHz. The IF range is from 85 to 130 MHz and its injection mode for the local oscillator is high side. Operation
-0.5
following source impedance z = 1.86 + j2.41 (normalized to 50 ).
1.0 0.5 2.0
A
Source Impedance
0.68 @ 30.2 z = 1.86 + j 2.41 y = 0.20 - j 0.26
A
0.5 1.0 2.0
Input Impedance (High Gain)
B B
-2.0 -1.0
0.75 @ -63.1 z = 0.5 - j 1.51 y = 0.20 + j 0.60
The TQ5131 is a single-ended mixer with switching capabilities for the various signal levels found in CDMA applications. It consists of a RF amplifier, followed by a single-ended mixer driven by a grounded gate LO buffer amplifier. The mixer output can be directed either to the CDMA IF amplifier or the AMPS IF amplifier via a switch. Pin 1 and 7 are used to control the RF amplifier gain select and the mixer mode select respectively.
TQ5131 RF / C2
Figure 2. RFA Input and Source Impedance LO Buffer Amplifier The on-chip LO buffer amplifier is a grounded gate FET. The capacitor also serves as a DC block to the control voltage. The TQ5131 has internal LO tuning. This eases the work of the RF system designer and eliminates the need for the external tank circuit (inductor and capacitor) that would otherwise be needed to tune the frequency response of the LO buffer. The LO is limited to high-side injection mode and it operates from 950MHz to 1030MHz. The input to the LO buffer is through pin 7 which also feeds the control line (C1) that selects the mixer mode of operation, either CDMA or AMPS. Due to this logic control, the only external component required at the LO port is a series capacitor to prevent DC from traveling to other parts of the system. The LO drive level of operation should be between -7 and 0 dBm. Best performance is obtained between -6 and -2 dbm. LO/filter/Mixer interaction The physical position of the image reject filter is likely to have an effect on the performance of the mixer especially in the Low Gain mode where the RF amplifier is switched out. This is primarily due to self-mixing of the LO energy bouncing from the filter back into the mixer either out-of-phase or in-phase creating an offset in magnitude. To minimize this effect, TriQuint
1 2 3 4
8 7 6 5
Mx Vdd
GND
LO / C1
GIC
IFA GS/C3
CDMA IF
AMPS IF
Figure 1. TQ5131 Block Diagram
Detailed Circuit Description: RF Amplifier The TQ5131 has an integrated pre-amplifier stage in a cascode configuration. The output is internally matched to 50 ohms at 881MHz. Pin 1 requires an external match that is set to deliver a 2:1 VSWR in both the low and high gain modes (i.e. RFA is on or off). Figure 2 shows an approximated impedance at pin 1 (RFA input) to implement any desired match. The TQ5131 performance in TriQuint's demo board was achieved using the
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TQ5131 Data Sheet
recommends placing the image-reject filter as close to the IC as possible. In TriQuint's demo board its position is 42 mils from the pad of the matching inductor and 126 mils from the IC pad. This location for the image-reject filter works well. CDMA IF Amplifier The CDMA IF amplifier is an open drain stage with a gain step to adjust the output power levels according to the system requirement. The source of the CDMA IF amplifier is connected directly to pin 3. This allows the system designer to adjust gain, output intercept and current (GIC) by adding an external selfbias circuit at this pin (see figure 4a and b). Recommended capacitor value in the self-bias circuit is 0.022 uF or greater. In addition to the 0.5 to 1 dB more of input intercept obtained by using a large value capacitor, the effects of low frequency components present at this pin are also reduced. Figure 4a. GIC Pin Self-Bias Circuit
17 12 7 2 -3 82 100 130 160 180 200 220 240 270 300 Bias Resistance R3 (ohms): (R2 constant at 8.2 ohms)
Gain (dB) Idd (mA) IIP3 (dBm)
Performance Vs. Bias Resistance (R3) for CDMA High Gain: (RF_Freq=882MHz, IF_Freq=85MHz, LO_Freq=967MHz, PLO=-4dBm, Vdd=2.8)
Figure 4b. Performance Vs. GIC Pin Bias Resistance, R3 AC degeneration of the CDMA IFA source has minimum or no effect on AMPS performance. Maximum gain is obtained when the total DC resistance (R2 + R3) at pin 3 is bypassed (see figure 4c).
TQ5131 1 2 R2 R3 C4 3 4 8 7 6 5
18 16 14 12 10 8 6 4 2 0
Performance Vs. Bias Resistance (R2) for CDMA High Gain: (RF_Freq=882MHz, IF_Freq=85MHz, LO_Freeq=967MHz, PLO=-4dBm, Vdd=2.8)
Gain (dB) IIP3 (dBm) Idd (mA)
C4 = 0.022uF R2 = 8.2 R3 = 82 Note: These values were optimized for TriQuint's 5131 Demo board. The discrepancy between these values and those of the customer's application may differ due to board and component parasitics.
0
10
20
30
39
51
62
Bias Resistance R2 (ohms): (R3 constant at 82 ohms)
Figure 4c. Performance Vs. GIC Pin Bias Resistance, R2 Once the operating point is chosen, the designer still has flexibility to adjust gain and intercept by varying the ratio of the total bias resistance, R2 + R3. In figure 4d one can observe how gain and intercept change while the current remains approximately constant at 16mA.
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TQ5131 Data Sheet
Performance Vs. RBias Ratio (R2/R3) for CDMA High Gain: (RF_Freq=882MHz, IF_Freq=85MHz, LO_Freeq=967MHz, PLO=-4dBm, Vdd=2.8) 20 15 10 5 0 8.2/82 18/68 27/62 39/51 R2/R3 (ohms): (Total Rbias ~ 90 ohms)
Gain (dB) Idd (mA) IIP3 (dBm)
selected before implementing the output match. Significant changes on this bias resistance might require a new match at the IF output. When designing the PCB, it is recommended to place the self bias circuit of the amplifier as close to the pin as possible to minimize possible loading effects that might cause an oscillation. Also the shunt capacitor of the IF match should be grounded close to the IC (see figure 4c). After designing the IF match in simulation using the given Sparameters, some adjustment might be needed when implementing the match on the bench. At this point remember that the mixer FET must be turned on since the IFA is directly coupled to it. Also make sure that the LO buffer amplifier is providing the proper drive level and that any unused ports are properly terminated. Figure 4 shows the circuit topology and component values designed for TriQuint's demo board. Verify that the match has a 2:1 VSWR in all modes. Figure 5 shows a typical CDMA IF output impedance. Figure 4c. CDMA IF Output Match (IF = 85MHz)
TQ5131 1 8 7 6 5
Figure 4d. Performance Vs. R2/R3 Ratio, Idd = 16mA Similarly, figure 4e shows gain and input intercept variation while the current is fixed at 12mA.
Performance Vs. RBias Ratio (R2/R3) for CDMA High Gain: (RF_Freq=882MHz, IF_Freq=85MHz, LO_Freq=967MHz, PLO=-4dBm, Vdd=2.8) 16 14 12 10 8 6 4 2 0 -2 0/188.2
Gain (dB) Idd (mA) IIP3 (dBm)
2 3 CDMA IF
C6=27pF
4
C7=27pF L2=180nH
8.2/180
27/160
56/130
R2/R3 (ohms) GIC pin: (Totol Rbias ~ 190 ohms)
Vdd
Note: These values were optimized for TriQuint's 5131 Demo board. The discrepancy between these values and those of the customer's application may differ due to board and component parasitics.
Figure 4e. Performance Vs. R2/R3 Ratio, Idd = 12.4mA The normalized impedance at the CDMA IF output is z = 5.0 - j 2.24 . There are several methods of measuring the port impedance of a device, this particular measurement was taken on the 5131 demo board by lifting pin 4 of the PCB pad and soldering the tip of a semirigid probe next to it. Care must be exercised when grounding the outer conductor of the semirigid probe. For the measurement to be valid the probe must be grounded very close to the pin. Before soldering the probe, its electrical length must be calculated and dialed in the network analyzer's port extension in order to move the calibration reference plane right at the tip of the probe. Keep in mind that the total DC bias resistance at the IF amplifier source must be
Figure 5. CDMA Output Impedance at Pin 4
1.0 0.5 2.0
D
CDIF output Impedance
0.72 @ -8.8 z = 5.0 - j 2.24 y = 0.17 + j 0.07
0.5
1.0
2.0
D
-0.5 -1.0
-2.0
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TQ5131 Data Sheet
AMPS IF Amplifier This amplifier also uses an open drain stage with a self-bias circuit. No Quiescent current adjustments are possible in this mode since the bias circuit is on-chip. While the IF output can be tuned for frequencies as high as 500 MHz, the downconverter performance is limited by the internal tuned circuit of the LO buffer amplifier. The highest IF that can be used without significant deviation from typical performance is 130 MHz. This output is a high impedance open drain FET z = 5.42 - j 9.04 (normalized). The match requires a RF choke to Vdd for proper biasing (see figure 6). Typical AMPS IF output impedance is shown in figure 7. Figure 6. AMPS IF Output Match (IF = 85 MHz)
TQ5131 1 2 3 4 8 7 6
C9=12pF
Vdd Decoupling External spurious signals at high and low frequencies can appear on the Vdd lines. Proper decoupling of these lines is required to eliminate unwanted noise. The recommended decoupling network has a PI configuration. On the main Vdd node, a large capacitor of 0.022 uF is use, followed by a 3.3 or 10 ohm resistor in series with the supply line, then another bypass cap that presents a low impedance to ground at the RF frequency of interest. The Vdd, pin 8, is bypassed on chip. Therefore, all that is needed is a series 3.3 to 10 resistor to the large capacitor, 0.022Fd.
Board Layout Recommendations All ground pins should be kept close to the IC and have its own via to the ground plane to minimize inductance. Most PC boards for portable applications have thin dielectric layers and very narrow line width which increase the board parasitic capacitance and inductance. To minimize these effects when implementing a matching network, it is recommended to relieve the ground underneath pads carrying RF signals whenever possible.
5
C10=18pF L3=270nH
AMPS IF
Vdd
Note: These values were optimized for TriQuint's 5131 Demo board. The discrepancy between these values and those of the customer's application may differ due to board and component parasitics.
Control Line Description The control lines can be toggled between high and low levels using CMOS logic circuitry. Control line C1 is used to switch between CDMA and AMPS IF output. The other two control lines C2 and C3, which are also tied to the LNA gain select and LNA mode respectively, set the various CDMA output levels required by the system. Receiver State AMPS Mode C1 0 1 1 1 1 C2 0 0 0 1 1 C3 1 0 1 0 1
1.0 0.5 2.0
E
AMIF output Impedance
0.91 @ - 9.3 z = 5.42 - j 9.04 y = 0.05 + j 0.08
0.5
1.0
2.0
E
CDMA High Gain CDMA HG, low lin
-0.5 -1.0
-2.0
CDMA Mid Gain CDMA Low Gain
Figure 7. AMPS Output Impedance at Pin 5
Table 1. Downconverter Control Bits
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TQ5131 Data Sheet
C1 = Mixer Mode, C2 = RFA gain select and LNA gain select , C3 = IFA gain select and LNA mode select. Receiver State RF AMP IF AMP
AMPS Mode CDMA High Gain CDMA HG, low lin CDMA Mid Gain CDMA Low Gain
HG, AMPS Idd HG, CDMA Idd HG, CDMA Idd Bypass Bypass
HG, AMPS Output LG, CDMA Output HG, CDMA Output LG, CDMA Output HG, CDMA Output
Table 2. Electrical States of RFA and IFA
Rx SYSTEM PERFORMANCE When measuring the mixer alone you will find that the low gain mode has a higher gain than the mid gain mode. These two modes describe the whole system (LNA + Mixer) spec rather than just the mixer. The difference between CDMA High-Gain (HG) and CDMA High-Gain-Low-Linearity (HGLL) is the input intercept of the LNA. In HG the LNA input intercept is +8dBm and so can withstand crossmodulation while transmitting. The HGLL mode is intended for standby phone operation where no transmission is taking place. MODE IDD (mA) AMPS High Gain HGLL Mid Gain Low Gain 14 27.8 20.9 23 12.7 GAIN (dB) 21.5 26 27.2 14.9 3.4 NF (dB) 2.3 1.74 2.08 3.54 14.12 IIP3 (dBm) -13 -8.9 -10.6 2 17.2
Table 3. TQ3131_5131 System Performance
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TQ5131 Data Sheet
Package Pinout
RF IN
VDD
GND
LO IN
Mode Select/ LO Input IFA Gain Select AMP's IF Out
GIC
CDMA IF IF Out Out
IF Out
Pin Descriptions
Pin Name RF IN GND GIC IF OUT IF OUT IFA Gain LO IN Vdd Pin # 1 2 3 4 5 6 7 8 Description and Usage RF Input, RF amplifier gain select, Logic Control 2 Ground, paddle Off chip tuning for gain/IP3/current CDMA IF Output AMPS IF Output IF amplifier gain select, Logic Control 3 LO Input, mode select (CDMA/AMPS), Logic Control 1 LNA Vdd, typical 2.8V
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TQ5131 Data Sheet
Package Type: SOT23-8 Plastic Package
Note 1
PIN 1 FUSED LEAD
b A c
E E1
Note 2
DIE
e
A1
L
DESIGNATION A A1 b c D e E E1 L Theta
DESCRIPTION OVERALL HEIGHT STANDOFF LEAD WIDTH LEAD THICKNESS PACKAGE LENGTH LEAD PITCH LEAD TIP SPAN PACKAGE WIDTH FOOT LENGTH FOOT ANGLE
METRIC 1.20 +/-.25 mm .100 +/-.05 mm .365 mm TYP .127 mm TYP 2.90 +/-.10 mm .65 mm TYP 2.80 +/-.20 mm 1.60 +/-.10 mm .45 +/-.10 mm 1.5 +/-1.5 DEG
ENGLISH 0.05 +/-.250 in .004 +/-.002 in .014 in .005 in .114 +/-.004 in .026 in .110 +/-.008 in .063 +/-.004 in .018 +/-.004 in 1.5 +/-1.5 DEG
NOTE 3 3 3 3 1,3 3 3 2,3 3
Notes 1. The package length dimension includes allowance for mold mismatch and flashing. 2. The package width dimension includes allowance for mold mismatch and flashing. 3. Primary dimensions are in metric millimeters. The English equivalents are calculated and subject to rounding error.
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TQ5131 Data Sheet
Additional Information
For latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Email: info_wireless@tqs.com Tel: (503) 615-9000 Fax: (503) 615-8900
For technical questions and additional information on specific applications: Email: info_wireless@tqs.com
The information provided herein is believed to be reliable; TriQuint assumes no liability for inaccuracies or omissions. TriQuint assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. TriQuint does not authorize or warrant any TriQuint product for use in life-support devices and/or systems. Copyright (c) 1998 TriQuint Semiconductor, Inc. All rights reserved. Revision A, March 10, 2000
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